FDC3535

FDC3535 P-Channel Power Trench® MOSFET FDC3535 P-Channel Power Trench® MOSFET -80 V, -2.1 A, 183 mΩ June 2010 Features General Description „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A „ Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications „ Load Switch „ Synchronous Rectifier S D D Pin 1 D D SuperSOTTM -6 G S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings -80 ±20 -2.1 -10 37 1.6 0.7 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 30 78 °C/W Device Marking .535 Device FDC3535 Package SSOT-6 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation FDC3535 Rev. C 1 www.fair...