Power MOSFET
Features n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Swit...
Description
Features n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche Allowed up to Tjmax n Lead-Free
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Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 95773B
IRLR024ZPbF IRLU024ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 58mΩ
S ID = 16A
D-Pak
I-Pak
IRLR024ZPbF IRLU024ZPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC RθJA RθJA
Junction-to-Case
iJunction-to-Ambient (PCB mount)
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier. www.irf.com
Max.
16 11 64 35 0.23 ± 16 25 25 S...
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