Document
μPA2821T1L
MOS FIELD EFFECT TRANSISTOR
PreliminaryData Sheet
R07DS0753EJ0100 Rev.1.00
May 25, 2012
Description
The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.
Features
• VDSS = 30 V (TA = 25°C) • Low on-state resistance
⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A) • 4.5 V Gate-drive available • Small surface mount package (8-pin HVSON (3333)) • Pb-free, Halogen Free
Ordering Information
Part No.
Lead Plating
Packing
Package
μPA2821T1L-E1-AT ∗1
Pure Sn (Tin)
Tape 3000 p/reel 8-pin HVSON (3333)
μPA2821T1L-E2-AT ∗1
typ. 0.028 g
Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature Single Avalanche Current ∗3 Signal Avalanche Energy ∗3
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS
Ratings 30 ±20 ±26
±104 1.5 3.8 52 150 −55 to +150 18 32.4
Unit V V A A W W W °C °C A mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
83.3 2.4
°C/W °C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
R07DS0753EJ0100 Rev.1.00 May 25, 2012
Page 1 of 6
μPA2821T1L
Electrical Characteristics (TA = 25°C)
Item Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state Resistance ∗1
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge
Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG
MIN.
1.0 14
Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Note: ∗1. Pulsed
QGS QGD VF(S-D) trr Qrr
TYP.
3.0 4.9 2490 820 740 29 69 98 54 51 32 4 22 0.9 49 41
MAX. 1
±10 2.5
3.8 10.5
Chapter Title
Unit μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC nC V ns nC
Test Conditions VDS = 30 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 5 V, ID = 6.5 A VGS = 10 V, ID = 26 A VGS = 4.5 V, ID = 6.5 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 15 V, ID = 13 A, VGS = 10 V, RG = 10 Ω
VGS = 10 V, VGS = 5 V VDD = 15 V, ID = 26 A IF = 26 A, VGS = 0 V IF = 26 A, VGS = 0 V, di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RG = 25 Ω
PG. VGS = 20 → 0 V
50 Ω
L VDD
BVDSS
ID VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG PG.
VGS 0
τ
τ = 1 μs Duty Cycle ≤ 1%
RL VDD
VGS
VGS
Wave Form
10% 0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90% 10% 10%
tr td(off) tf
ton toff
D.U.T. IG = 2 mA
PG. 50 Ω
RL VDD
R07DS0753EJ0100 Rev.1.00 May 25, 2012
Page 2 of 6
dT - Percentage of Rated Power - %
μPA2821T1L
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 120 100 80 60 40 20 0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
ID - Drain Current - A
Chapter Title
FORWARD BIAS SAFE OPERATING AREA
1000 100 10 1
ID ( p uls e) ID ( D C )
1 ms
R D S( o n ) L imite d (VGS = 10 V)
500 μ s PW = 100 μ s 200 μ s
DC Power Dissipation Limited
0.1
TC = 25ºC Single Pulse
0.01 0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V
rth(t) - Transient Thermal Resistance - °C/W
1000 100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-A) = 83.3ºC/W
10
1
0.1
0.01 100 μ
Single pulse Rth(ch-A): Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
1m
10 m
100 m
1
PW - Pulse Width - s
Rth(ch-C) = 2.4ºC/W 10 100 1000
ID - Drain Current - A
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 120
100 VGS = 10 V
80 4.5 V
60
40
20
0 0
Pulsed 0.2 0.4 0.6 0.8
VDS - Drain to Source Voltage - V
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
100
10 Tch = 150°C 75°C 25°C
1 –55°C
0.1
0.01
0.001 0
VDS = 10 V Pulsed
12345
VGS - Gate to Source Voltage - V
R07DS0753EJ0100 Rev.1.00 May 25, 2012
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RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS(off) – Gate to Source Cut-off Voltage -
μPA2821T1L
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3
2
1
0 -50
VDS = 10 V, ID = 1.0 mA
0 50 100 150 Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 8 7 Pulsed 6 5 4 VGS = 4.5 V 3
10 V 2 1 0
1 10 100 1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 8
Pulsed
6 VGS = 4.5 V ID = 6.5 A
4
VGS = 10 V 2 ID = 26A
0 -50 0 50 100 150
.