UPA2520

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2520 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2520 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipments. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.17±0.05 FEATURES Low on-state resistance RDS(on)1 = 13.2 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 17 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A) Built-in gate protection diode Small and surface mount package (8-pin VSOF (2429)) Pb-free (This product does not contain Pb in external electrode and other parts.) 0 to 0.025 2.8±0.1 2.4±0.1 1 0.32±0.05 4 0.05 M S A (0.3) 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 0.8±0.05 S ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 5 sec) Note2 ID(DC) ID(pulse) PT1 PT2 ±10 ±40 1.0 2.2 A A W W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3 Tstg −55 to +150 °C IAS 10 A EAS 10 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the ga...