DatasheetsPDF.com

UPA2210T1M Dataheets PDF



Part Number UPA2210T1M
Manufacturers Renesas
Logo Renesas
Description P-CHANNEL MOS FET
Datasheet UPA2210T1M DatasheetUPA2210T1M Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2210T1M P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2210T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES • Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS = −4.5 V, ID = −7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS = −2.5 V, ID = −3.6 A) RDS(on)3 = 81 mΩ MAX. (VGS = −1.8 V, ID = −3.6 A) • Built-in gate protection diode • −1.8 V Gate drive available ORDERING .

  UPA2210T1M   UPA2210T1M



Document
DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2210T1M P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2210T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES • Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS = −4.5 V, ID = −7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS = −2.5 V, ID = −3.6 A) RDS(on)3 = 81 mΩ MAX. (VGS = −1.8 V, ID = −3.6 A) • Built-in gate protection diode • −1.8 V Gate drive available ORDERING INFORMATION PART NUMBER μ PA2210T1M-T1-AT Note μ PA2210T1M-T2-AT Note PACKING 8 mm embossed taping 3000 p/reel PACKAGE 8-pin VSOF (1629) 0.011 g TYP. Note Pb-free (This product does not contain Pb in external electrode and other parts.) 0.225±0.1 PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.145±0.05 0 to 0.025 1.9±0.1 1.6±0.1 1 0.32±0.05 4 0.05 M S A 0.8±0.05 S 0.05 S 1, 2, 3, 6, 7, 8: Drain 4 : Gate 5 : Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m8 V Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 5 sec) Note2 ID(DC) ID(pulse) PT1 PT2 m7.2 m28.8 1.1 2.5 A A W W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G19451EJ1V0DS00 (1st edition) Date Published September 2008 NS Printed in Japan 2008 μ PA2210T1M ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. Zero Gate Voltage Drain Current IDSS Gate Leakage Current IGSS Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge Body Diode Forward Voltage Note QGD VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr VDS = −20 V, VGS = 0 V VGS = m8 V, VDS = 0 V VDS = −10 V, ID = −1 mA VDS = −10 V, ID = .


UPA2211T1M UPA2210T1M UPA2200T1M


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)