IRFH8321PBF

VDS Vgs max RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID (@Tc(Bottom) = 25°C) 30 ± 20 4.9 6.8 19.4 25i V V m nC A Applications Synchronous MOSFET for high frequency buck converters IRFH8321PbF HEXFET® Power MOSFET PQFN 5X6 mm Features Low Thermal Resistance to PCB (< 2.3°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification results in  Benefits Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH8321TRPBF Package Type PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Note Absolute Max imum Ratings Pa ram ete r VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC (Bottom) = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C ID M PD @TA = 25°C PD @TC (Bottom) = 25°C Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) cPulsed Drain Current gPower Dissipation gPower Dissipation gLinear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range Max. ± 20 21 17 83hi 52hi 25i 332 3.4 54 0.027 -55 to + 150 Units V A W W /°C °C Notes  through ‡ are on page 9 1 www.irf.com © 2012 Internati...