FS50SMJ-2

MITSUBISHI Nch POWER MOSFET FS50SM-3 HIGH-SPEED SWITCHING USE FS50SM-3 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 4 20.0 19.5MIN. 4.4 G 0.6 2.8 1.0 q 5.45 w e 5.45 4 wr ¡10V DRIVE ¡VDSS ................................................................................ 150V ¡rDS (ON) (MAX) .............................................................. 31m Ω ¡ID ......................................................................................... 50A ¡Integrated Fast Recovery Diode (TYP.) .........130ns q q GATE w DRAIN e SOURCE r DRAIN e TO-3P APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 150 ±20 50 200 50 50 200 150 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS50SM-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) ...