P70N02LD

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P70N02LD TO-252 (DPAK) PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 7mΩ ID 60A D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VGS ID IDM IAR EAS EAR PD Tj, Tstg TL LIMITS ±20 60 40 150 60 140 5.6 60 32.75 -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient RθJA Case-to-Heatsink RθCS 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1％ TYPICAL 0.7 MAXIMUM 2.5 65 UNITS °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C LIMITS UNIT MIN TYP MAX 25 1 1.5 3 V ±250 nA 25 µA 250 1 MAY-24-2001 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P70N02LD TO-252 (DPAK) On...