Data Sheet
μPA2738GR
P-channel MOSFET –30 V, –10 A, 15 mΩ
R07DS0870EJ0100 Rev.1.00
Aug 28, 2012
Description
The μ PA2...
Data Sheet
μPA2738GR
P-channel MOSFET –30 V, –10 A, 15 mΩ
R07DS0870EJ0100 Rev.1.00
Aug 28, 2012
Description
The μ PA2738GR is P-channel MOS Field Effect
Transistor designed for DC/DC converter and power management applications of portable equipment.
Features
VDSS = −30 V (TA = 25°C) Low on-state resistance
⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −10 A) 4.5 V Gate-drive available Small and surface mount package (Power SOP8) Pb-free and Halogen free
Ordering Information
Power SOP8
Part No. μ PA2738GR-E1-AT μ PA2738GR-E2-AT
LEAD PLATING Pure Sn
PACKING Tape 2500 p/reel
Package Power SOP8 0.08 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2
Channel Temperature
Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS
Ratings −30 m20 m10 m100 1.1
2.5
150 −55 to +150
10
10
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
114
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
Unit V V A A W W °C °C A mJ
R07DS0870EJ0100 Rev.1.00 Aug 28, 2012
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μPA2738GR
Electrical Characteristics (TA = 25°C)
Item Zero Gate Voltage Drain Current ...