Document
PMPB19XP
20 V, single P-channel Trench MOSFET
20 September 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -10.3 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -7.2 A; Tj = 25 °C resistance
- 19 22.5 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
PMPB19XP
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
16 7
25
Graphic symbol
D
G
384
Transparent top view
DFN2020MD-6 (SOT1220)
S 017aaa257
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PMPB19XP
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals
Version SOT1220
4. Marking
Table 4. Marking codes Type number PMPB19XP
Marking code 1R
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
PMPB19XP
All information provided in this document is subject to legal disclaimers.
Product data sheet
20 September 2012
[1] [1] [1]
[1]
Min Max Unit - -20 V
-12 12
V
- -10.3 A
- -7.2 A
- -4.5 A
- -30 A
- 1.7 W
© NXP B.V. 2012. All rights reserved
2 / 14
NXP Semiconductors
PMPB19XP
20 V, single P-channel Trench MOSFET
Symbol
Parameter
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Conditions Tamb = 25 °C; t ≤ 5 s Tsp = 25 °C
Tamb = 25 °C
Min Max Unit
[1] -
3.5 W
- 12.5 W
-55 150 °C
-55 150 °C
-65 150 °C
[1] -
-1.9 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
120
017aaa123
120
017aaa124
Pder (%)
Ider (%)
80 80
40 40
0 - 75
- 25
25
75 125 175 Tj (°C)
Fig. 1. Normalized total power dissipation as a function of junction temperature
0 - 75 - 25
25
75 125 175 Tj (°C)
Fig. 2. Normalized continuous drain current as a function of junction temperature
PMPB19XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 September 2012
© NXP B.V. 2012. All rights reserved
3 / 14
NXP Semiconductors
PMPB19XP
20 V, single P-channel Trench MOSFET
-102 ID (A)
-10
-1
-10-1
Limit RDSon = VDS/ID
DC; Tsp = 25 °C DC; Tamb = 25 °C; drain mounting pad 6 cm2
017aaa749
tp = 100 µs tp = 1 ms tp = 10 ms tp = 100 ms
-10-2 -10-2
IDM = single pulse
-10-1
-1
-10 -102 VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
6. Thermal characteristics
Table 6. Symbol Rth(j-a)
Rth(j-sp)
Thermal characteristics Parameter
Conditions
thermal resistance from junction to ambient
in free air in free air; t ≤ 5 s
thermal resistance from junction to solder point
Min Typ Max Unit
[1] -
235 270 K/W
[2] -
67 74 K/W
[2] -
33 36 K/W
- 5 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMPB19XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 September 2012
© NXP B.V. 2012. All rights reserved
4 / 14
NXP Semiconductors
PMPB19XP
20 V, single P-channel Trench MOSFET
103
Zth(j-a) (K/W)
102
duty cycle = 1
0.75 0.5
0.33 0.25
0.2
0.1
0.05 10
0.02
0.01 0
017aaa542
1 10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103 tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pul.