FDME430NT

FDME430NT N-Channel PowerTrench® MOSFET October 2013 FDME430NT N-Channel PowerTrench® MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A „ Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A „ Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ RoHS Compliant This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Applications „ Li-lon Battery Pack „ Baseband Switch „ Load Switch „ DC-DC Conversion G D Pin 1 D S S D D DD DD GS BOTTOM MicroFET 1.6x1.6 Thin TOP MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Power Dissipation for Single Operation TA = 25 °C Power Dissipation for Single Operation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±12 6 30 2.1 0.7 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Note 1b) 60 175 °C/W Device Marking YA Device FDME430NT Package MicroFET 1.6x1.6 Thin Reel Size 7 ’’ Tape Width 8 mm Qua...