UPA2465T1Q

μ PA2465T1Q MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0190EJ0100 Rev.1.00 Dec 06, 2010 Description The μ PA2465T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2465T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features 2.5 V drive available Low on-state resistance ⎯ RDS(on)1 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) ⎯ RDS(on)2 = 17.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) ⎯ RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A) ⎯ RDS(on)4 = 24.5 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) Built-in G-S protection diode against ESD Ordering Information Part No. μ PA2465T1Q-E1-AX ∗1 LEAD PLATING Ni/Pd/Au PACKING 8 mm embossed taping Package 8-pin HUSON (2720) 3000 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Symbol N-CHANNEL Drain to Source Voltage (VGS = 0 V) VDSS 20 Gate to Source Voltage (VDS = 0 V) Drain Current (DC) ∗1 Drain Current (pulse) ∗2 Total Power Dissipation (2 unit) ∗1 VGSS ID(DC) ID(pulse) PT1 ±12 ±6.5 ±60 1.0 Channel Temperature Tch 150 Storage Temperature Tstg −55 to +150 Notes: ∗1. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗2. PW ≤ 10 μs, Duty Cycle ≤ 1% Unit V V A A W °C °C R07DS0190EJ0100 Rev.1.00 Dec 06, 2010 Page 1 of 7 μ PA2465T1Q Electrical Characteris...