μ PA2461T1Q
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0186EJ0100 Rev.1.00
Dec 06, 2010
Description
The μ...
μ PA2461T1Q
MOS FIELD EFFECT
TRANSISTOR
Preliminary Data Sheet
R07DS0186EJ0100 Rev.1.00
Dec 06, 2010
Description
The μ PA2461T1Q is a switching device, which can be driven directly by a 2.5 V power source.
The μ PA2461T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
Features
2.5 V drive available Low on-state resistance
⎯ RDS(on)1 = 21.5 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) ⎯ RDS(on)2 = 22.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) ⎯ RDS(on)3 = 25.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A) ⎯ RDS(on)4 = 32.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) Built-in G-S protection diode against ESD
Ordering Information
Part No. μ PA2461T1Q-E1-AX ∗1
LEAD PLATING Ni/Pd/Au
PACKING 8 mm embossed taping
Package 8-pin HUSON (2720)
3000 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
N-CHANNEL
Drain to Source Voltage (VGS = 0 V) VDSS
30
Gate to Source Voltage (VDS = 0 V) Drain Current (DC) ∗1 Drain Current (pulse) ∗2 Total Power Dissipation (2 unit) ∗1
VGSS ID(DC) ID(pulse) PT1
±12 ±6.5 ±50 1.0
Channel Temperature
Tch
150
Storage Temperature
Tstg −55 to +150
Notes: ∗1. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗2. PW ≤ 10 μs, Duty Cycle ≤ 1%
Unit V V A A W °C °C
R07DS0186EJ0100 Rev.1.00 Dec 06, 2010
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μ PA2461T1Q
Electrical Characteris...