DATA SHEET
SILICON POWER TRANSISTOR
2SC2690,2690A
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW/HIGH FREQUENCY POWER AMPLIFIC...
DATA SHEET
SILICON POWER
TRANSISTOR
2SC2690,2690A
NPN SILICON EPITAXIAL
TRANSISTOR FOR LOW/HIGH FREQUENCY POWER AMPLIFICATION
DESCRIPTION
These products are general purpose
transistors designed for use in audio and radio frequency power amplifiers.
FEATURES
Suitable for use in driver stage of 50 to 100 W audio amplifiers and output stage of TV vertical deflection circuit.
High voltage and high fT VCEO = 120 V (2SC2690) / 160 V (2SC2690A) fT = 175 MHz (VCE = 5.0 V, IC = 0.2 A)
Complementary to the 2SA1220 and 2SA1220A
PNP transistors.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SC2690 2SC2690-AZ Note
TO-126 (MP-5) TO-126 (MP-5)
2SC2690A
TO-126 (MP-5)
2SC2690A-AZ Note
TO-126 (MP-5)
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE DRAWING (Unit: mm)
8.5 MAX. 3.2 ±0.2
2.8 MAX.
3.8 ±0.2
12.0 MAX.
12 3 12 TYP.
2.5 ±0.2 13.0 MIN.
0.55
+0.08 –0.05
0.8
+0.08 –0.05
2.3 TYP.
2.3 TYP.
1.2 TYP.
1. Emitter 2. Collector 3. Base
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
2SA2690 2SA2690A
Collector to Base Voltage
VCBO
120
160
Collector to Emitter Voltage
VCEO
120
160
Emitter to Base Voltage
VEBO
5.0
Collector Current (DC) Collector Current (pulse) Note
IC(DC) IC(pulse)
1.2 2.5
Base Current (DC)
IB(DC)
0.3
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C)
PT
20
Junction Temperature
Tj 150
Storage Temperature
Tstg −55 to +150
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
V V V A A A W W °C °C
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