TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/313
Devices
2N2432 2N2432A
Qualified Level...
TECHNICAL DATA
NPN SILICON LOW POWER
TRANSISTOR
Qualified per MIL-PRF-19500/313
Devices
2N2432 2N2432A
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1) @ TC = +250C (2)
Operating & Storage Junction Temp. Range
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA > +250C 2) Derate linearly 4.0 mW/0C above TC > +250C
Symbol VCEO VCBO VECO IC
PT
Tstg TJ
2N2432 2N2432A 30 45 30 45 15 18 100 300 600
-65 to +200 -65 to +175
Unit Vdc
Vdc
Vdc
mAdc
mW mW 0C 0C
Symbol RθJC
Max. 0.25
Unit mW/ 0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Emitter-Collector Breakdown Voltage
IE = 100 µAdc, IB = 0
2N2432 2N2432A
V(BR)ECO
IE = 10 mAdc, IB = 0 Collector-Emitter Breakdown Current
Both
IC = 10 mAdc
2N2432 2N2432A
V(BR)CEO
Collector-Emitter Cutoff Current
VCB = 25 Vdc VCB = 40 Vdc
2N2432 2N2432A
ICES
Min.
15 18 10
30 45
TO- 18* (TO-206AA)
*See appendix A for package outline
Max.
Unit
Vdc
Vdc
10 ηAdc 10
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120101 Page 1 of 2
2N2432, 2N2432A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCB = 30 Vdc
2N2432
VCB = 25 Vdc
2N243...