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JANTXV2N2432A

Microsemi Corporation

NPN SILICON LOW POWER TRANSISTOR

TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 Devices 2N2432 2N2432A Qualified Level...


Microsemi Corporation

JANTXV2N2432A

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TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 Devices 2N2432 2N2432A Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temp. Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA > +250C 2) Derate linearly 4.0 mW/0C above TC > +250C Symbol VCEO VCBO VECO IC PT Tstg TJ 2N2432 2N2432A 30 45 30 45 15 18 100 300 600 -65 to +200 -65 to +175 Unit Vdc Vdc Vdc mAdc mW mW 0C 0C Symbol RθJC Max. 0.25 Unit mW/ 0C ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Emitter-Collector Breakdown Voltage IE = 100 µAdc, IB = 0 2N2432 2N2432A V(BR)ECO IE = 10 mAdc, IB = 0 Collector-Emitter Breakdown Current Both IC = 10 mAdc 2N2432 2N2432A V(BR)CEO Collector-Emitter Cutoff Current VCB = 25 Vdc VCB = 40 Vdc 2N2432 2N2432A ICES Min. 15 18 10 30 45 TO- 18* (TO-206AA) *See appendix A for package outline Max. Unit Vdc Vdc 10 ηAdc 10 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2432, 2N2432A JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics OFF CHARACTERISTICS (con’t) Collector-Emitter Cutoff Current VCB = 30 Vdc 2N2432 VCB = 25 Vdc 2N243...




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