NTMFS4H013NF

NTMFS4H013NF Power MOSFET 25 V, 269 A, Single N−Channel, SO−8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers & Point of Load MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1) Power Dissipation RqJA (TA = 25°C, Note 1) Continuous Drain Current RqJC (TC = 25°C, Note 1) Power Dissipation RqJC (TC = 25°C, Note 1) Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 51 Apk, L = 0.3 mH) Drain to Source dV/dt VDSS VGS ID PD ID PD IDM EAS dV/dt 25 V ±20 V 43 A 2.70 W 269 A 104 W 505 A 390 mJ 7 V/ns Maximum Junction Temperature Storage Temperature Range TJ(max) TSTG 150 −55 to 150 °C °C Lead Temperature Soldering Reflow (SMD TSLD 260 °C Styles Only), Pb-Free Versions (Note 2) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR...