NTTFS4C08N

NTTFS4C08N MOSFET – Power, Single, N-Channel, m8FL 30 V, 52 A Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications DC−DC Converters Power Load Switch Notebook Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VGS ±20 V TA = 25°C ID 15 A TA = 85°C 10.8 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.13 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID TA = 85°C 21 A 15 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 85°C Power Dissipation RqJA (Note 2) TA = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C TC = 85°C Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt PD ID PD ID PD IDM TJ, Tstg IS dV/dt 4.2 W 9.3 A 6.7 0.82 W 52 A 37.5 25.5 W 144 −55 to +150 23 6.0 A °C A V/ns Single Pulse Drain−to−Source Avalanche Energy EAS (TJ = 25°C, VGS = 10 V, IL = 29 Apk, L = 0.1 mH, RG = 25 W) (Note 3) Lead Temperature for Soldering Purposes TL (1/8″ from case for 10 s) 42 mJ 260 °C Stresse...