NTMFD4C87N

NTMFD4C87N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 26 A Features Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications DC−DC Converters System Voltage Rails Point of Load www.onsemi.com V(BR)DSS Q1 Top FET 30 V Q2 Bottom FET 30 V RDS(ON) MAX 5.4 mW @ 10 V 8.1 mW @ 4.5 V 3.1 mW @ 10 V 4.3 mW @ 4.5 V ID MAX 20 A 26 A D1 (3, 4, 9) EFFICIENCY (%) Figure 1. Typical Application Circuit 100 95 90 85 80 VIN = 12 V VOUT = 1.2 V 75 VGS = 5 V FSW = 300 kHz 70 TA = 25°C 0 5 10 15 20 25 LOAD CURRENT (A) Figure 2. Typical Efficiency Performance POWERPHASEGEVB Evaluation Board © Semiconductor Components Industries, LLC, 2015 March, 2015 − Rev. 0 1 (1) G1 (2) S1 SW (5, 6, 7) (8) G2 S2 (10) PIN CONNECTIONS D1 4 D1 3 9 10 D1 S2 S1 2 G1 1 5 SW 6 SW 7 SW 8 G2 (Bottom View) MARKING DIAGRAM 1 DFN8 CASE 506CR 4C87N AYWZZ 1 4C87N = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 10 of this data sheet. Publication Order Number: NTMFD4C87N/D NTMFD4C87N MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Drain−to−Source Voltage Q1 VDSS 30 V Q2 Gate−to−Source Voltage Gate−to−Source Voltage Q1 VGS Q2 ±20 V C...