J132-Z

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES Gate drive available at logic level (VGS = −4 V) High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω) 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Conditions Drain to source voltage VDSS VGS = 0 Gate to source voltage VGSS VDS = 0 Drain current (DC) ID(DC) TC = 25°C Drain current (pulse) ID(pulse) PW ≤ 300 µs duty cycle ≤ 10 % Total power dissipation PT TC = 25°C Total power dissipation PT Ta = 25°C Channel temperature Tch Storage temperature Tstg * Printing board mounted ** 7.5 cm2 × 0.7 mm ceramic board mounted PACKAGE DRAWING (UNIT: mm) Ratings −30 +–20 +–2.0 +–8.0 Electrode connection <1> Gate <2> Drain <3> Source <4> Fin (drain) Unit INTERNAL EQUIVALENT CIRCUIT V V A A 20 1.0*, 2.0** 150 −55 to +150 W W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Do...