DatasheetsPDF.com

C5554 Dataheets PDF



Part Number C5554
Manufacturers GME
Logo GME
Description Silicon Transistor
Datasheet C5554 DatasheetC5554 Datasheet (PDF)

Silicon Epitaxial Planar Transistor FEATURES z Capable low voltage operation APPLICATIONS Pb Lead-free z Designed for low noise amplifier at VHF UHF and CATV band Production specification 2SC5554 ORDERING INFORMATION Type No. Marking 2SC5554 YH SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 15 VCEO Collector-Emitter Voltage 9 VEBO Emitter-Base Voltage 1.5 IC Collector Current -Continuous .

  C5554   C5554



Document
Silicon Epitaxial Planar Transistor FEATURES z Capable low voltage operation APPLICATIONS Pb Lead-free z Designed for low noise amplifier at VHF UHF and CATV band Production specification 2SC5554 ORDERING INFORMATION Type No. Marking 2SC5554 YH SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 15 VCEO Collector-Emitter Voltage 9 VEBO Emitter-Base Voltage 1.5 IC Collector Current -Continuous 20 PC Collector Dissipation 80 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C143 Rev.A www.gmicroelec.com 1 Production specification Silicon Epitaxial Planar Transistor 2SC5554 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 15 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 9 Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 1.5 Collector cut-off current ICBO VCB=15V,IE=0 Collector cut-off current ICEO VCB=9V,RBE=∞ Emitter cut-off current IEBO VEB=1.5V,IC=0 DC current gain hFE VCE=1V,IC=5mA 50 120 Transition frequency fT VCE=1V, IC= 5mA 3.5 7 Collector output capacitance Power gain Noise Figure Cob VCB=1V, IE=0,f=1MHz 0.6 PG VCE=1V, IC= 5mA, f=900MHz 9 12 NF VCE=1V,IC=5mA, f=900MHz 1.4 MAX UNIT V V V 10 μA 1 mA 10 μA 250 GHz 0.9 pF dB 3 dB TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified C143 Rev.A www.gmicroelec.com 2 Silicon Epitaxial Planar Transistor Production specification 2SC5554 C143 Rev.A www.gmicroelec.com 3 Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package A E KB D G C J H SOLDERING FOOTPRINT 0.95 0.95 Production specification 2SC5554 SOT-23 SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm 0.90 0.80 2.00 Unit : mm PACKAGE INFORMATION Device Package Shipping 2SC5554 SOT-23 3000/Tape&Reel C143 Rev.A www.gmicroelec.com 4 .


2SC5554 C5554 DTC143ZM


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)