Document
STY60NM60
N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STY60NM60
600V < 0.055Ω 60 A
TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
3 2 1
Max247
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE
MARKING
STY60NM60
Y60NM60
PACKAGE Max247
PACKAGING TUBE
July 2003
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STY60NM60
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1) ISD ≤60A, di/dt ≤400 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Value 600 600 ±30 60 37.8 240 560
6 4.5 15 –65 to 150 150
0.22 30 300
Max Value 30
1.4
Unit V V V A A A W KV
W/°C V/ns °C °C
°C/W °C/W
°C
Unit A
J
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown Voltage
Test Conditions Igs=± 1mA (Open Drain)
Min. 30
Typ.
Max.
Unit V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
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STY60NM60
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage Drain Current (VGS = 0)
VDS = Max Rating VDS = Max Rating, TC = 125°C
10 100
IGSS
Gate-body Leakage Current (VDS = 0)
VGS = ± 20V
±10
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
345
RDS(on)
Static Drain-source On Resistance
VGS = 10 V, ID = 30 A
0.050 0.055
Unit V
µA µA µA
V Ω
DYNAMIC
Symbol gfs (1)
Parameter Forward Transconductance
Ciss Coss Crss
RG
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Gate Input Resistance
Test Conditions
VDS = ID(on) x RDS(on)max, ID = 30 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain
Typ. 35
7300 2000
40
1.8
Max.
Unit S
pF pF pF
Ω
SWITCHING ON
Symbol
Parameter
td(on) tr
Turn-on Delay Time Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
Test Conditions
VDD = 300 V, ID = 30 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3)
VDD = 470 V, ID = 60 A, VGS = 10 V
Min.
Typ.
55 95
Max.
Unit
ns ns
178 266 44.5 95
nC nC nC
SWITCHING OFF
Symbol
Parameter
tr(Voff) tf tc
Off-voltage Rise Time Fall Time Cross-over Time
Test Conditions
VDD = 400 V, ID = 60 A, RG = 4.7Ω, VGS = 10 V (see test circuit, Figure 5)
Min.
Typ.
130 76 105
Max.
Unit
ns ns ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD ISDM (2)
Source-drain Current Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 60 A, VGS = 0
trr Qrr IRRM
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
ISD = 60 A, di/dt = 100 A/µs, VDD = 30 V, Tj = 150°C (see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Min.
Typ.
600 14 48
Max. 60 240
1.5
Unit
A A
V
ns µC A
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STY60NM60
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Sta.