XP151A13A0MR-G

XP151A13A0MR-G Power MOSFET ETR1119_003 ■GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■PIN CONFIGURATION/ MARKING ■FEATURES Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V : Rds(on) = 0.14Ω@ Vgs = 2.5V : Rds(on) = 0.25Ω@ Vgs = 1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free ■PRODUCT NAMES 11 3 x G：Gate S：Source D：Drain PRODUCTS XP151A13A0MR XP151A13A0MR-G(*) PACKAGE SOT-23 SOT-23 ORDER UNIT 3,000/Reel 3,000/Reel (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. * x represents production lot number. ■EQUIVALENT CIRCUIT ■ABSOLUTE MAXIMUM RATINGS Ta = 25℃ PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Channel Power Dissipation * Channel Temperature Storage Temperature Vdss Vgss Id Idp Idr Pd Tch Tstg 20 ±8 1 4 1 0.5 150 -55~150 V V A A A W ℃ ℃ ...