K4093

2SK4093 Silicon N Channel MOS FET High Speed Power Switching Features Capable of 2.5V gate drive Low drive current Low on-resistance Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) G 321 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 30% 2. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID Note1 ID Note2 (pulse) IDR IDR Note2 (pulse) Pch θch-a Tch Tstg REJ03G1534-0300 Rev.3.00 Feb 01, 2008 D 1. Source 2. Drain 3. Gate S Ratings 250 ±10 1 2 0.5 2 0.9 139 150 –55 to +150 (Ta = 25°C) Unit V V A A A A W °C/W °C °C REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Page 1 of 6 2SK4093 Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) Ciss C...