N-Channel Enhancement Mode Power MOSFET
FNK06N02C N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The FNK06N02Cuses advanced trench technology to provide e...
Description
FNK06N02C N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V
DS(ON)<10.0mΩ @ VGS=2.5V
● High Power and current handing capability ● Lead free product is acquired
Schematic diagram
Application
●Battery Switch ●Load switch ●Power management
Package Marking And Ordering Information
Device Marking
Device
Device Package
06N02C
FNK06N02C
TO-251
Reel Size
Tape width
Quantity
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC =25
Continuous Drain Current (TJ =150℃)
TC =70℃ TA =25℃
ID
TA =70℃
Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
20 ±12 50 20 20 15 80 50 -55 To 150
Unit
V V
A
A W ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
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v1.0
Parameter
Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay ...
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