Monolithic Dual Switching Diode
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Featrues z We declare that the material of product complianc...
Description
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Featrues z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBAV74LT1G S-LBAV74LT1G
3
1 2 SOT–23
ORDERING INFORMATION
Device
Marking
LBAV74LT1G S-LBAV74LT1G
JA
LBAV74LT3G S-LBAV74LT3G
JA
Shipping 3000/Tape&Reel
10000/Tape&Reel
3 CATHODE
1 ANODE
2 ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current
Peak Forward Surge Current THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol VR IF
I FM(surge)
Symbol PD
R θJA PD
R θJA T J , T stg
Value 50 200 500
Max 225
1.8 556 300
2.4 417 –55 to +150
Unit Vdc mAdc mAdc
Unit mW
mW/°C °C/W mW
mW/°C °C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE )
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I (BR) = 5.0 µAdc)
V (BR)
Reverse Voltage Leakage Current
IR
(V R = 50 Vdc, T J = 125°C)
(V R = 50Vdc)
Diode Capacitance (V R = 0, f = 1.0 MHz)
CD
Forward Voltage
VF
(I F = 100 mAdc)
Reverse Recovery Time
t rr
(I F=IR=10mAdc, IR(REC)=1.0mAdc, measured at IR= 1.0 mA, RL=1...
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