LMBD7000WT1G

Dual Switching Diode LESHAN RADIO COMPANY, LTD. FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBD7000WT1G S-LMBD7000WT1G 3 ORDERING INFORMATION Device Marking LMBD7000WT1G S-LMBD7000WT1G M5C LMBD7000WT3G S-LMBD7000WT3G M5C Shipping 3000/Tape & Reel 10000/Tape & Reel MAXIMUM RATINGS(EACH DIODE) Rating Symbol Reverse Voltage Forward Current Peak Forward Surge Current VR IF I FM(surge) Value 100 200 500 THERMALCHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θ JA PD R θ JA T J , T stg Max 200 1.6 556 300 2.4 417 –55 to +150 Unit Vdc mAdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICEMARKING LMBD7000WT1G=M5C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)(EACH DIODE) Characteristic Symbol Min OFFCHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 µAdc) V (BR) 100 Reverse Voltage Leakage Current (V R = 50 Vdc) (V R = 100 Vdc) (V R = 50 Vdc,125°C) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc) (Figure 1) Capacitance(VR=0V) 1. FR–5 = 1.0 x 0.7...