Common Cathode Silicon Dual Switching Diode
LESHAN RADIO COMPANY, LTD.
Common Cathode Silicon Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Du...
Description
LESHAN RADIO COMPANY, LTD.
Common Cathode Silicon Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
z
Fast
t,
rr
<
3.0
ns
z
Low
C, D
<
2.0
pF
z We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LM1MA141WKT1G S-LM1MA141WKT1G LM1MA142WKT1G S-LM1MA142WKT1G
SC–70/SOT–323 PACKAGE COMMON CATHODE
DUAL SWITCHING DIODE 40/80 V–100 mA
SURFACE MOUNT
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Reverse Voltage
LM1MA141WKT1G VR
LM1MA142WKT1G
Peak Reverse Voltage
LM1MA141WKT1G VRM
LM1MA142WKT1 G
Forward Current
Single
IF
Dual
Peak Forward Current
Single
IFM
Dual
Peak Forward Surge Current Single
I (1) FSM
Dual
Value 40 80 40 80 100 150 225 340 500 750
Unit Vdc Vdc mAdc mAdc mAdc
3
1 2
SC – 70
CATHODE 3
1 ANODE
2
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature
Symbol PD TJ Tstg
Max 150 150 –55 ~ +150
Unit mW °C °C
Marking Symbol Type No.141WK142WK Symbol MT MU
MTX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
ELECTRICAL CHARACTERISTICS (T = 25°C) A Characteristic...
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