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IRF7780MPbF Dataheets PDF



Part Number IRF7780MPbF
Manufacturers International Rectifier
Logo International Rectifier
Description N-Channel Power MOSFET
Datasheet IRF7780MPbF DatasheetIRF7780MPbF Datasheet (PDF)

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits  Improved Gate, Avalanche and Dynamic dv/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dv/dt and di/dt Capability  Lead-Free, RoHS Comp.

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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits  Improved Gate, Avalanche and Dynamic dv/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dv/dt and di/dt Capability  Lead-Free, RoHS Compliant StrongIRFET™ IRF7780MTRPbF DirectFET® N-Channel Power MOSFET  VDSS RDS(on) typ. max ID 75V 4.5m 5.7m 89A   S S S D GS S S ME   D DirectFET® ISOMETRIC Base part number IRF7780MPbF Package Type DirectFET® ME Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF7780MTRPbF RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A) 15 ID = 53A 12 9 TJ = 125°C 6 3 TJ = 25°C 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 100 80 60 40 20 0 25 50 75 100 125 TC , Case Temperature (°C) 150 Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 4, 2015    IRF7780MTRPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS TJ TSTG Gate-to-Source Voltage Operating Junction and Storage Temperature Range Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance Symbol Parameter RJA RJA RJA RJC RJ-PCB Junction-to-Ambient  Junction-to-Ambient  Junction-to-Ambient  Junction-to-Case  Junction-to-PCB Mounted    Max. 89 57 356 96 0.77 ± 20 -55 to + 150   Units A   W W/°C V °C    82 133 See Fig.15,16, 23a, 23b mJ A mJ   Typ. ––– 12.5 20 ––– 0.75   Max. 45 ––– ––– 1.3 –––   Units °C/W Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RG Internal Gate Resistance Notes:  Mounted on minimum footprint full size board with metalized back and with small clip heatsink.  Used double sided cooling , mounting pad with large heatsink.          Min. Typ. Max. Units Conditions 75 ––– ––– V VGS = 0V, ID = 250µA ––– 53 ––– mV/°C Reference to 25°C, ID = 1.0mA ––– ––– 4.5 5.2 5.7 –––  m VGS = 10V, ID = 53A  VGS = 6.0V, ID = 27A  2.1 ––– 3.7 V VDS = VGS, ID = 150µA ––– ––– 1.0 ––– ––– 150 µA VDS = 75V, VGS = 0V.


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