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Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters
Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant
StrongIRFET™ IRF7780MTRPbF
DirectFET® N-Channel Power MOSFET
VDSS RDS(on) typ.
max ID
75V 4.5m 5.7m
89A
S S
S D
GS
S S
ME
D DirectFET® ISOMETRIC
Base part number IRF7780MPbF
Package Type DirectFET® ME
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number IRF7780MTRPbF
RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A)
15 ID = 53A
12
9 TJ = 125°C
6
3 TJ = 25°C
0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
100
80
60
40
20
0 25
50 75 100 125 TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
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June 4, 2015
IRF7780MTRPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor
VGS TJ TSTG
Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RJA RJA RJA RJC RJ-PCB
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted
Max. 89 57 356 96 0.77 ± 20
-55 to + 150
Units
A
W W/°C
V
°C
82 133
See Fig.15,16, 23a, 23b
mJ
A mJ
Typ. ––– 12.5 20 ––– 0.75
Max. 45 ––– ––– 1.3 –––
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
Notes: Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Used double sided cooling , mounting pad with large heatsink.
Min. Typ. Max. Units
Conditions
75 ––– ––– V VGS = 0V, ID = 250µA
––– 53 ––– mV/°C Reference to 25°C, ID = 1.0mA
––– –––
4.5 5.2
5.7 –––
m
VGS = 10V, ID = 53A VGS = 6.0V, ID = 27A
2.1 ––– 3.7 V VDS = VGS, ID = 150µA
––– ––– 1.0 ––– ––– 150
µA
VDS = 75V, VGS = 0V.