ADVANCE INFORMATION
DMS3014SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 30V
RDS(ON) m...
ADVANCE INFORMATION
DMS3014SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 30V
RDS(ON) max 13mΩ @ VGS = 10V 14mΩ @ VGS = 4.5V
ID max TA = 25°C
9.5A
9.0A
Features and Benefits
DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a
Schottky in a single die to deliver:
Low RDS(ON) – minimize conduction losses Low VSD – reducing the losses due to body diode conduction Low Qrr – lower Qrr of the integrated
Schottky reduces body
diode switching losses Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
100% UIS (Avalanche) rated
100% Rg tested
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Backlighting Power Management Functions DC-DC Converters
Mechanical Data
Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Term...