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IXBL64N250
Monolithic Bipolar MOS Transistor
Description
Advance Technical Information High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS
Transistor
IXBL64N250 VCES IC110 VCE(sat) = = ≤ 2500V 46A 3.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol VCES VCGR VGES VGEM IC25 IICCM110 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 15...
IXYS Corporation
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IXBL64N250
Monolithic Bipolar MOS Transistor
- IXYS Corporation
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