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IXTF1N450

IXYS
Part Number IXTF1N450
Manufacturer IXYS
Description High Voltage Power MOSFET
Published Jul 28, 2015
Detailed Description High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N450 VDSS ID25 RDS(on) = 4500V ...
Datasheet PDF File IXTF1N450 PDF File

IXTF1N450
IXTF1N450

Overview
High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N450 VDSS ID25 RDS(on) = 4500V = 0.
9A  80 ISOPLUS i4-PakTM Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 4500 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C 0.
9 3.
0 160 - 55 .
.
.
+150 150 - 55 .
.
.
+150 A A W C C C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force 20.
.
120 / 4.
5.
.
27 N/lb.
50/60Hz, 1 Minute 4500 V~ 6g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VG...


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