■■APPLICATION: High Voltage Applications.
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER Collector-base voltage Collector-emitter...
■■APPLICATION: High Voltage Applications.
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL RATING UNIT
VCBO
-120 V
VCEO
-120 V
VEBO
-5
V
IC -800 mA
PC 1 W
TJ 150 ℃
Tstg -55~150 ℃
A1023
—
PNP silicon —
1 TO-92L 1. Emitter 2. Collector 3. Base
■■ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
DC Current Gain
hFE 80
240 VCE= -5V,IC= -100mA
Collector Cut-off Current
ICBO
-0.1 µA VCB= -120V,IE=0
Emitter Cut-off Current
IEBO
-0.1 µA VEB= -5V,IC=0
Collector-Base Breakdown Voltage BVCBO -120
V IC= -1mA,IE=0
Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage BVEBO
-120 -5
V IC= -10mA,IB=0 V IE= -1mA,IC=0
Base-Emitter Voltage
VBE
-1 V VCE= -5V,IC= -500mA
Collector-Emitter Saturation Voltage VCE(sat)
Gain bandwidth product
fT
50
-1 120
V IC= -500mA,IB= -50mA MHz IC= -100mA,VCE= -5V
Common Base Output Capacitance Cob
40 pF VCB= -10V, IE=0, f = 1MHz
■■hFE Classification Classification
hFE
O 80~160
Y 120~240
...