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FS30SM-6

Mitsubishi Electric Semiconductor

Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS30ASH-06 HIGH-SPEED SWITCHING USE FS30ASH-06 OUTLINE DRAWING 6.5 5.0 ± 0.2 Dimensions ...


Mitsubishi Electric Semiconductor

FS30SM-6

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Description
MITSUBISHI Nch POWER MOSFET FS30ASH-06 HIGH-SPEED SWITCHING USE FS30ASH-06 OUTLINE DRAWING 6.5 5.0 ± 0.2 Dimensions in mm r 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 ± 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡2.5V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 30m Ω ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ............. 65ns q MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 60 ±10 30 120 30 30 120 35 –55 ~ +150 –55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS30ASH-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 10V, VDS = 0V VDS =...




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