STW69N65M5-4

STW69N65M5-4 N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh™ V Power MOSFET in a TO247-4 package Datasheet - production data 2 34 1 TO247-4 Features Order code VDS @ TJmax STW69N65M5-4 710 V RDS(on) max 0.045 Ω ID 58 A Higher VDS rating Higher dv/dt capability Excellent switching performance thanks to the extra driving source pin Easy to drive 100% avalanche tested Figure 1. Internal schematic diagram Drain(1) Gate(4) Applications High efficiency switching applications: – Servers – PV inverters – Telecom infrastructure – Multi kW battery chargers Description Driver source(3) Power source(2) AM10177v1 This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Order code STW69N65M5-4 Table 1. Device summary Marking Package 69N65M5 TO247-4 Packaging Tube January 2014 This is information on a product in full production. DocID024925 Rev 2 1/13 www.st.com Contents Contents STW69N65M5-4 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...