MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-...
MOSPEC
Schottky Barrier Rectifiers
Using the
Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 125 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O ESD: 8KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC directives
S50D30 Thru S50D60
SCHOTTKY BARRIER RECTIFIERS 50 AMPERES 30-60 VOLTS
TO-3P
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Average Rectifier Forward Current
Per diodes Total Device (Rated VR),TC=100
Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz)
S50D Symbol
30 35 40 45 50 60
Unit
VRRM VRWM 30 35 40 45 50 60
VR
V
VR(RMS) 21 25 28 32 35 42
V
IF(AV) IFM
25 50
50
A A
Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz)
IFSM
400
A
Operating and Storage Junction Temperature Range
TJ , TSTG
-65 to +125
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
Rθ j-c
1.7
/w
ELE...