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RCR1526SQ

RCR
Part Number RCR1526SQ
Manufacturer RCR
Description P-Channel Enhancement Mode Field Effect Transistor
Published Jul 22, 2015
Detailed Description RCR1526SQ P-Channel Enhancement Mode Field Effect Transistor z Features VDS(V) = -30V, ID = -5.2A, RDS(ON) = 51mΩ @VGS...
Datasheet PDF File RCR1526SQ PDF File

RCR1526SQ
RCR1526SQ

Overview
RCR1526SQ P-Channel Enhancement Mode Field Effect Transistor z Features VDS(V) = -30V, ID = -5.
2A, RDS(ON) = 51mΩ @VGS = -10V.
RDS(ON) = 68mΩ @VGS = -4.
5V.
High density cell design for low RDS(ON).
very small outline surface mount package.
z Pin Configuration DDD D z General Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a SSSG z Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm...


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