Ordering number:686I
PNP/NPN Epitaxial Planar Silicon Transistors
2SB824/2SD1060
50V/5A Switching Applications
Applica...
Ordering number:686I
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB824/2SD1060
50V/5A Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.
Features
· Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max/IC=(–)3A, IB=(–)0.3A.
Package Dimensions
unit:mm 2010C
[2SB824/2SD1060]
( ) : 2SB824
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance
ICBO IEBO hFE1 hFE2
fT Cob
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)3A
VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz
* : The 2SB824/2SD1060 are graded as follows by hFE at 1A :
70 Q 140 100 R 200 140 S 280
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Ratings (–)60 (–)50 (–)6 (–)5 (–)9 30 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
70* 30
30 100 (160)
max (–)0.1 (–)0.1 280*
Unit mA mA
MHz pF pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels ...