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VS-STPS20L15D-N3 Dataheets PDF



Part Number VS-STPS20L15D-N3
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-STPS20L15D-N3 DatasheetVS-STPS20L15D-N3 Datasheet (PDF)

www.vishay.com VS-STPS20L15DPbF, VS-STPS20L15D-N3 Vishay Semiconductors Schottky Rectifier, 20 A Base cathode TO-220AC 13 Cathode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AC 20 A 15 V See Electrical table 600 mA at 100 °C 125 °C Single die 10 mJ FEATURES • 125 °C TJ operation (VR < 5 V) • Optimized for OR-ing applications • Ultra low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliab.

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www.vishay.com VS-STPS20L15DPbF, VS-STPS20L15D-N3 Vishay Semiconductors Schottky Rectifier, 20 A Base cathode TO-220AC 13 Cathode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AC 20 A 15 V See Electrical table 600 mA at 100 °C 125 °C Single die 10 mJ FEATURES • 125 °C TJ operation (VR < 5 V) • Optimized for OR-ing applications • Ultra low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 19 Apk, TJ = 125 °C (typical) Range VALUES 20 15 700 0.25 - 55 to 125 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-STPS20L15DPbF VS-STPS20L15D-N3 15 15 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS Repetitive avalanche current IAR TEST CONDITIONS VALUES 50 % duty cycle, TC = 85 °C, rectangular waveform 20 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated 10 ms sine or 6 ms rect. pulse VRRM applied TJ = 25 °C, IAS = 2 A, L = 6 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 700 330 10 2 UNITS A A mJ A Revision: 30-Aug-11 1 Document Number: 94325 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-STPS20L15DPbF, VS-STPS20L15D-N3 Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Forward voltage drop See fig. 1 VFM (1) Reverse leakage current See fig. 2 Threshold voltage Forward slope resistance Maximum junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) VF(TO) rt CT LS dV/dt 19 A 40 A 19 A 40 A TJ = 25 °C TJ = 100 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR TJ = TJ maximum VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR TYP. MAX. - 0.41 - 0.52 0.25 0.33 0.37 0.50 - 10 - 600 0.182 7.6 - 2000 8- 10 000 UNITS V mA V m pF nH V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Maximum thermal resistance, junction to ambient TJ TStg RthJC RthCS RthJA DC operation See fig. 4 Mounting surface, smooth and greased (for TO-220) DC operation (for D2PAK) Approximate weight Mounting torque Marking device minimum maximum Non-lubricated threads Case style TO-220AC VALUES - 55 to 125 - 55 to 150 1.5 UNITS °C 0.50 °C/W 40 2g 0.07 oz. 6 (5) 12 (10) kgf · cm (lbf · in) STPS20L15D Revision: 30-Aug-11 2 Document Number: 94325 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) CT - Junction Capacitance (pF) www.vishay.com VS-STPS20L15DPbF, VS-STPS20L15D-N3 Vishay Semiconductors 1000 100 10 TJ = 125 °C TJ = 75 °C TJ = 25 °C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics IR - Reverse Current (mA) 1000 100 10 1 TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 0.1 0 3 6 9 12 15 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 000 1000 TJ = 25 °C 100 0 5 10 15 20 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 ZthJC - Thermal Impedance (°C/W) 1 0.1 0.01 0.00001 Single pulse (thermal resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 P DM t 1.


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