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VS-STPS20L15DPbF, VS-STPS20L15D-N3
Vishay Semiconductors
Schottky Rectifier, 20 A
Base cathode
TO-220AC
13 Cathode Anode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max. TJ max. Diode variation
EAS
TO-220AC 20 A 15 V
See Electrical table 600 mA at 100 °C
125 °C Single die
10 mJ
FEATURES • 125 °C TJ operation (VR < 5 V) • Optimized for OR-ing applications • Ultra low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long
term reliability • High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and moisture resistance • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only)
DESCRIPTION The Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ
Rectangular waveform
tp = 5 μs sine 19 Apk, TJ = 125 °C (typical) Range
VALUES 20 15 700 0.25
- 55 to 125
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VS-STPS20L15DPbF VS-STPS20L15D-N3 15 15
UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current See fig. 5
IF(AV)
Maximum peak one cycle non-repetitive surge current See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
VALUES
50 % duty cycle, TC = 85 °C, rectangular waveform
20
5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 2 A, L = 6 mH
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
700 330 10
2
UNITS A
A mJ A
Revision: 30-Aug-11
1 Document Number: 94325
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-STPS20L15DPbF, VS-STPS20L15D-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop See fig. 1
VFM (1)
Reverse leakage current See fig. 2
Threshold voltage Forward slope resistance Maximum junction capacitance Typical series inductance Maximum voltage rate of change
Note (1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO) rt CT LS
dV/dt
19 A 40 A 19 A 40 A TJ = 25 °C TJ = 100 °C
TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR
TYP. MAX.
- 0.41
- 0.52
0.25
0.33
0.37
0.50
- 10
- 600
0.182
7.6
- 2000
8-
10 000
UNITS
V
mA V m pF nH V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Maximum thermal resistance, junction to ambient
TJ TStg RthJC
RthCS
RthJA
DC operation See fig. 4
Mounting surface, smooth and greased (for TO-220)
DC operation (for D2PAK)
Approximate weight
Mounting torque Marking device
minimum maximum
Non-lubricated threads Case style TO-220AC
VALUES - 55 to 125 - 55 to 150
1.5
UNITS °C
0.50 °C/W
40
2g
0.07 oz.
6 (5) 12 (10)
kgf · cm (lbf · in)
STPS20L15D
Revision: 30-Aug-11
2 Document Number: 94325
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IF - Instantaneous Forward Current (A) CT - Junction Capacitance (pF)
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VS-STPS20L15DPbF, VS-STPS20L15D-N3
Vishay Semiconductors
1000
100
10
TJ = 125 °C TJ = 75 °C
TJ = 25 °C
1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
IR - Reverse Current (mA)
1000 100 10 1
TJ = 100 °C TJ = 75 °C
TJ = 50 °C TJ = 25 °C
0.1 0 3 6 9 12 15
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10 000
1000
TJ = 25 °C
100 0
5 10 15 20
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
ZthJC - Thermal Impedance (°C/W)
1
0.1
0.01 0.00001
Single pulse (thermal resistance)
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
P DM
t
1.