SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
BC517
EPITAXIAL PLANAR NPN TRANSISTOR
BC
JA
...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE HIGH DARLINGTON
TRANSISTOR.
BC517
EPITAXIAL PLANAR
NPN TRANSISTOR
BC
JA
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PC Tj Tstg
RATING 40 30 10 500 625 150
-55ᴕ150
UNIT V V V mA mW ᴱ ᴱ
L M
C
K
E G
D
H FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. COLLECTOR 2. BASE 3. EMITTER
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) VBE(sat) fT
Collector Output Capacitance
Cob
TEST CONDITION IC=0.1mA, IE=0 IC=10mA, IB=0 IE=1.0mA, IC=0 VCB=40V, IE=0 VEB=10V, IC=0 IC=100mA, VCE=2V IC=100mA, IB=1mA IC=100mA, IB=1mA IC=100mA, VCE=2V, f=100MHz VCB=10V, f=1MHz, IE=0
MIN. 40 30 10 30k -
TYP. 1.5
220 5.0
MAX. 1.0 1.0 1.0 2.0 -
UNIT V V V ỌA ỌA
V V MHz pF
1999. 11. 30
Revision No : 1
1/2
DC CURRENT GAIN h FE
BC517
h FE - I C
10 6
Ta=125 C 10 5
Ta=25 C Ta=-55 C 10 4
10 3 10 -1
100 101 102 COLLECTOR CURRENT I C (mA)
10...