DSF05S30CTB
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF05S30CTB
High Speed Switching Application
Unit: mm
0.25±0.02 0.65±0.02
Absolute Maximum Ratings (Ta = 25°C)
0.7±0.02
1.2±0.05
CATHODE MARK
Characteristic
Symbol
Rating
Unit
Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature rang...
