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DSF01S30SC Dataheets PDF



Part Number DSF01S30SC
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Type Diode
Datasheet DSF01S30SC DatasheetDSF01S30SC Datasheet (PDF)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC DSF01S30SC High-Speed Switching Application Unit: mm 0.1 9±0.02 Abusolute Maximum Ratings (Ta = 25°C) 2 0.025±0.015 0.62 ±0.03 0.3 8 Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 100* 2 125 −55 to 125 *: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. V mA A °C °C .

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC DSF01S30SC High-Speed Switching Application Unit: mm 0.1 9±0.02 Abusolute Maximum Ratings (Ta = 25°C) 2 0.025±0.015 0.62 ±0.03 0.3 8 Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 100* 2 125 −55 to 125 *: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. V mA A °C °C 1 0 .32±0.03 0.3±0.03 0.19±0.02 0.27±0.02 0.025±0.015 1: CATHODE 2: ANODE Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). SC2 JEDEC ― JEITA ― TOSHIBA 1-1R1A Weight: 0.17 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward voltage Reverse current Reverse current Total capacitance Symbol VF(1) VF(2) IR(1) IR(2) CT Test Circuit Test Condition ― IF = 10 mA ― IF = 100 mA ― VR = 10 V ― VR = 30 V ― VR = 0, f = 1 MHz Min Typ. Max Unit ― 0.27 0.3 V ― 0.41 0.5 V ― ― 7 μA ― ― 50 μA ⎯ 9.3 ⎯ pF Marking Equivalent Circuit (Top View) 1 2009-12-03 DSF01S30SC Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2 2009-12-03 FORWARD CURRENT IF (mA) DSF01S30SC REVERSE CURRENT IR ((μuAA)) 100 Ta=75℃ 10 50℃ 1 25℃ 0.1 0.01 IF - VF 0℃ -25℃ 1000 100 10 1 0.001 0 0.1 0.2 0.3 0.4 0.5 FORWARD VOLTAGE VF (V) 0.1 0.6 0 CT - VR 10 f=1MHz Ta=25℃ IR - VR Ta=75℃ 50℃ 25℃ 5 10 15 20 25 REVERSE VOLTAGE VR (V) 30 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) TOTAL CAPACITANCE CT (pF) 3 2009-12-03 DSF01S30SC RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unin.


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