LRB411DLT1G

LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G zApplications Low current rectification LRB411DLT1G 3 zFeatures 1) Small mold type. (SOT-23) 2) Low IR 3) High reliability. zConstruction Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta = 25°C) Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current（*1） Forward current s urge peak （60Hz・1cyc）（*1） Junction tem perature Storage tem perature (*1) Rating of per diode Sym bol VRM VR Io IFSM Tj Ts tg Lim its 40 20 500 3 125 -40 to +125 zElectrical characteristics (Ta = 25°C) Param eter Forwarad voltage Revers e current Capacitance between term inal Sym bol Min. Typ. Max. VF1 - - 0.50 VF2 - - 0.30 IR1 - - 30 Ct1 - 20 - 1 2 SOT– 23 3 CATHODE 1 ANODE Unit V V mA A ℃ ℃ Unit Conditions V IF=500m A V IF=10m A µA VR=10V pF VR=10V , f=1MHz z Device marking and ordering information Device Marking LRB411DLT1G D3E LRB411DLT3G D3E Shipping 3000/Tape&Reel 10000/Tape&Reel Rev.O 1/4 LESHAN RADIO COMPANY, LTD. FORWARD CURRENT:IF(mA) FORWARD VOLTAGE:VF(mV) LRB411DLT1G Electrical characteristic curves (Ta = 25°C) 1000 100 Ta= 2 5 ℃ Ta= 7 5 ℃ Ta= 1 2 5 ℃ 10 1 Ta= - 2 5 ℃ REVERSE CURRENT:IR(uA) 10000 1000 100 10 1 0.1 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 500 0.1 0 CAPACITANCE BETWEEN TER M IN A L S:Ct( pF) Ta= 1 2 5 ℃ Ta= 7 5 ℃ Ta= 2 5 ℃ 100 10 ...