K2981

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2981 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A) Low Ciss : Ciss = 860 pF (TYP.) Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK2981 TO-251 2SK2981-Z TO-252 PACKAGE DRAWING (Unit : mm) 7.0 MIN. 5.5 ±0.2 13.7 MIN. 1.6 ±0.2 6.5 ±0.2 5.0 ±0.2 4 1 23 1.3 MAX. 1.5 +0.2 –0.1 2.3 ±0.2 0.5 ±0.1 0.6 ±0.1 2.3 2.3 0.6 ±0.1 0.75 1. Gate 2. Drain 3. Source 4. Fin (Drain) TO-251(MP-3) +0.2 –0.1 6.5 ±0.2 5.0 ±0.2 4 1.5 2.3 ±0.2 0.5 ±0.1 1.0 MIN. 1.5 TYP. 0.5 10.0 MAX. 5.5 ±0.2 0.8 4.3 MAX. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0) VDSS 30 Gate to Source Voltage (VDS = 0) VGSS ±20 Drain Current (DC) Drain Current (Pulse) Note ID(DC) ID(pulse) ±20 ±80 Total Power Dissipation (Tc = 25 °C) PT 20 Channel Temperature Tch 150 Storage Temperature Tstg –55 to + 150 V V A A W °C °C Note PW ≤ 10 µs, Duty cycle ≤ 1 % 12 3 12.0 MIN. 1.3 MAX. 2.3 2.3 0.9 0.8 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) TO-252(MP-3Z) (SURFACE MOUNT TYPE) EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the g...