DMN3016LFDE

DMN3016LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TA = +25°C 10A 8.5A Features and Benefits  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Low On-Resistance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Battery Management Application  Power Management Functions  DC-DC Converters Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type E) D Bottom View 6D D1 5D D2 4S S G3 Pin Out G S Internal Schematic Ordering Information (Note 4) Notes: Part Number DMN3016LFDE-7 DMN3016LFDE-13 Case U-DFN2...