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Pb Free Product
BLM3400
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The BLM3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
D G
GENERAL FEATURES
● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
S Schematic diagram
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications ●Load switch ●Power management
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3400
BLM3400
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30 ±12 5.8 30 1.4 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250µA
1.0 ℃/W
Min Typ Max Unit
30 33
-
V
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Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage
IDSS IGSS
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2)
gFS
Clss Coss Crss
td(on) tr
td(off) tf Qg
Qgs Qgd
VSD IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
VDS=30V,VGS=0V VGS=±12V,VDS=0V
VDS=VGS,ID=250µA VGS=2.5V, ID=4A VGS=4.5V, ID=2.9A VGS=10V, ID=2.9A VDS=5V,ID=2.9A
VDS=15V,VGS=0V, F=1.0MHz
VDD=15V,ID=2.9A VGS=10V,RGEN=3Ω
VDS=15V,ID=5.8A, VGS=4.5V
VGS=0V,IS=2.9A
Pb Free Product
BLM3400
- - 1 µA - - ±100 nA
0.7 0.9
- 45 - 34 - 31
10 -
1.4
59 45 41
-
V mΩ mΩ mΩ S
- 623 - 99 - 77
-
PF PF PF
- 3.3 - 4.8 - 26 -4 - 9.5 - 1.5 -3
-
nS nS nS nS nC nC nC
- 0.75 1.2 - - 2.9
V A
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Pb Free Product
BLM3400
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Pb Free Product
BLM3400
SOT-23 PACKAGE INFORMATION
Symbol
A A1 A2 b c D E E1 e e1 L L1 θ
Dimension.