BLM8205A

Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET Description The BLM8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management TSSOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 8205A BLM8205A TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 19.5 ±10 6 25 1.5 -55 To 150 83 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=19.5V,VGS=0V Min Typ Max Unit 19.5 21 -- 1 V μA ...