BLM8205

Pb Free Product BLM8205 N-Channel Enhancement Mode Power MOSFET Description The BLM8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 4A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V D1 G1 G2 D2 S1 S2 Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package 8205 BLM8205 SOT23-6L Reel Size Ø180mm Tape width 8mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 19.5 ±10 4 25 1.25 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250µA Zero Gate Voltage Drain Current IDSS VDS=19.5V,VGS=0V 100 ℃/W Min Typ Max Unit 19.5 21 -- 1 V µA ...