BLM9435
P-Channel Enhancement Mode MOSFET
FEATURES
VDS VGS －30V ±20V
RDSon TYP 51mR@-10V
68mR@-4V5
ID －5.4A
DESCRIPTION
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power managem...
