LRB491DLT1G

LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB491DLT1G zApplications 1) Low-power rectification 2) For switching power supply zFeatures 1) Small mold type. (SO T-23) 2) Ultra low VF. (VF=0.40V Typ. at 1A) 3) IF=1.0A guaranteed despite the size. zConstruction Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage DC forward current Peak forward surge current Junction temperature Storage temperature ∗ 60Hz for 1 Symbol VRM VR IF ∗IFSM Tj Tstg zElectrical characteristics (Ta = 25°C) Limits 25 20 1.0 3 125 −40∼+125 Unit V V A A ˚C ˚C Parameter Symbol Min. Forward voltage VF − Reverse current IR − Note) ESD sensitive product handling required. Typ. − − Max. 0.45 200 Unit Conditions V IF=1.0A µA VR=20V z Device marking and ordering information Device LRB491DLT1G LRB491DLT3G Marking D2E D2E Shipping 3000/Tape&Reel 10000/Tape&Reel LRB491DLT1G 3 1 2 SOT– 23 3 CATHODE 1 ANODE Rev.O 1/3 FORWARD CURRENT : IF (A) Ta=7152˚5C˚C 25˚C −25˚C REVERSE CURRENT : IR (mA) LESHAN RADIO COMPANY, LTD. LRB491DLT1G Electrical characteristic curves (Ta = 25°C) 10 1 100m 10m 1m 0.1m 0 0.1 0.2 0.3 0.4 0.5 FORWARD VOLTAGE : VF (V) 0.6 Fig.1 Forward characteristics 1000 100 10 1 100µ Ta=125˚C 75˚C 25˚C 10µ −25˚C 1µ 0.1µ 0 10 20 30 40 50 60 REVERSE VOLTAGE : VR (V) 70 Fig.2 Reversecharacteristics TERMINAL CAPACITANCE : CT (p...