LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
Features
Low forward current High breakdown voltage Guard ring prote...
LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
Features
Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar
Schottky barrier diodes with an integrated guard ring for stress protection.Single diodes and double diodes with different pinning are available. We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device
LBAS70BST1G S-LBAS70BST1G
LBAS70BST3G S-LBAS70BST3G
LBAS70BST5G S-LBAS70BST5G
Marking R R R
Shipping 5000/Tape&Reel 8000/Tape&Reel 10000/Tape&Reel
LBAS70BST5G S-LBAS70BST5G
1
SOD882
2
1 Cathode
2 Anode
Rev.A 1/4
LESHAN RADIO COMPANY, LTD.
LBAS70BST5G , S-LBAS70BST5G
MAXIMUM RATINGS (TA = 25°C) Parameter
Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature
Symbol VR IF IFSM IFSM Tstg Tj Tamb
Min. -65 -65
Max. 70 70 70 100
+150 150 +150
Unit V mA mA mA °C °C °C
Conditions
tp<1s;δ<0.5 tp<10ms
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol Max.
Forward voltage(Fig.1)
VF 410 750
1
Reverse current(Fig.2 ;note1)
IR 100 10
Charge carrier life time (krakauer method)
τ 100
Diode capacit...